On Radioactivity–Exposed Nanophotodetector Optoreliability

• 作者: Emmanuel A. Anagnostakis
• 来源期刊: 现代物理(英文)
• 学科: 医学
• 关键词: Radiation-Hardness OPTOELECTRONIC Reliability PHOTODETECTORS PHOTORESPONSIVE Nanointerfaces Quantum Efficiency & Detection Yield
• 年，卷（期）: xdwlyw_2011,（7）
• 页码范围: 766-770
• 页数: 5页
• 分类号: R73

摘要

The optoelectronic reliability of representative radioactivity-exposed nanophotodetectors and the degree of functionally tolerable radioactivity-induced responsivity de-emphasis, against increasing cumulative radioactivity-dose, is notionally considered and modelled, with a view towards experimental findings concerning p-i-n photosensors being exposed to regulated successive (α, β)-particle bombardments.