Study of “Radiation Effects of Nuclear High Energy Particles” on Electronic Circuits and Methods to Reduce Its Destructive Effects

• 作者: Alireza Mallahzadeh Daryoush Masti Maryam Nezafat Omid Zeynali
• 来源期刊: 现代物理(英文)
• 学科: 医学
• 关键词: ELECTRONIC CIRCUITS RADIATION Silicon High Energy Neutrons SIMULATED Thermal
• 年，卷（期）: 2011,（12）
• 页码范围: 1567-1573
• 页数: 7页
• 分类号: R73

摘要

This research concerns on (TID), (DD) and (SEE) effects also high energy particles’ effects on electronic properties of silicon. It investigates the silicon electronic properties exposed to these particles using a laboratory neutron radiation sources. Some Pieces of a silicon wafer were under neutron radiation at different times and the electrical properties of each one was illustrated by plate resistance measurement and also the strength of the current voltage was simulated by Fluka and MCNP software. Based on these results, authorized limit of silicon tolerance was obtained against high energy neutrons radiation. We put them in the electric furnace under thermal recovery to overcome the unusual behavior of irradiated samples.