New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature

• 作者: Adel Kalboussi Amine Touati Nabil Sghaier Samir Chatbouri
• 来源期刊: 纳米科学与工程(英文)
• 学科: 化学
• 关键词: SINGLE-ELECTRON Transistor (SET) Master Equation ORTHODOX Theory TUNNEL CURRENT Thermionic CURRENT SIMON
• 年，卷（期）: nmkxygcyw_2012,（4）
• 页码范围: 171-175
• 页数: 5页
• 分类号: O6

摘要

We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.