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摘要:
At present, CuInSe2 (referred to as CIS) semiconductor has become one of the hot points in solar cell field at home and abroad for its excellent performances, such as direct bandgap, high light absorption coefficient, high photoelectric conversion efficiency and long-term stability. In this paper, the CIS bulk materials are prepared by the horizontal Bridgman method with double-heat sources, the crystal structure, microstructure morphology and composition of the samples are analyzed in X-ray diffraction instrument (XRD) and scanning electronic microscope (SEM) with Energy Dispersive X-ray Spectrum (EDX), and surface electrical state and electrical properties of the samples are characterized in X-ray photoelectron spectroscopy (XPS) and four point resistivity test system. The results show that the CIS crystal was grown, and that the conductive performance of the samples is good which display the characteristics of p-type semiconductor. Furthermore, a thin film CIS sample was obtained by argon ion-beam scanning bombardment, and it has high solar energy absorptivity and the bandgap of 0.99 eV analyzed in Ultraviolet-visible Spectrum that is suitable for solar cell. Keywords: Solar
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篇名 Preparation and Performance Research of CuInSe<sub>2</sub>Materials Applied in Solar Cell
来源期刊 结晶过程及技术期刊(英文) 学科 医学
关键词 Solar Cell CUINSE2 RESISTIVITY Ultraviolet-Visible SPECTRUM
年,卷(期) 2012,(4) 所属期刊栏目
研究方向 页码范围 142-145
页数 4页 分类号 R73
字数 语种
DOI
五维指标
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研究主题发展历程
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Solar
Cell
CUINSE2
RESISTIVITY
Ultraviolet-Visible
SPECTRUM
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期刊影响力
结晶过程及技术期刊(英文)
季刊
2161-7678
武汉市江夏区汤逊湖北路38号光谷总部空间
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109
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