A Novel Responsivity Model for Stripe-Shaped Ultraviolet Photodiode

• 作者: Kehan Zhu Xiangliang Jin Xiaoya Zhou Yongjia Zhao
• 来源期刊: 电路与系统(英文)
• 学科: 工学
• 关键词: RESPONSIVITY MODEL Lateral PN Junction Stripe-Shaped Silicon ULTRAVIOLET (UV) PHOTODIODE CMOS
• 年，卷（期）: 2012,（4）
• 页码范围: 348-352
• 页数: 5页
• 分类号: TN3

摘要

A novel responsivity model, which is based on the solution of transport and continuity equation of carriers generated both in vertical and lateral PN junctions, is proposed for optical properties of stripe-shaped silicon ultraviolet (UV) photodiodes. With this model, the responsivity of the UV photodiode can be estimated. Fabricated in a standard 0.5 μm CMOS process, the measured spectral responsivity of the stripe-shaped UV photodiode shows a good match with the numerical simulation result of the responsivity model at the spectral of UV range. It means that the responsivity model, which is used for stripe-shaped UV photodiode, is reliable.