Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si<sub>1-y</sub>Niy:H at Very Low Temperature with Magnetic Field

• 作者: Abdelfattah Narjis Abdelghani Sybous Abdelhamid El kaaouachi Gerard Buskipski Jamal Hemine Lhoussine Limouny Rachid Abdia Said Dlimi
• 来源期刊: 现代物理(英文)
• 学科: 物理学
• 关键词: Amorphous Silicon-Nickel Alloys a-Si1-yNiy:H Variable Range Hopping Conductivity Metal Insulator Transition Positive Magnetoresistance
• 年，卷（期）: 2012,（6）
• 页码范围: 447-450
• 页数: 4页
• 分类号: O48

摘要

We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.