An ultralow-energy negative cluster ion beam system and its application in preparation of few-layer graphene

• 来源期刊: 科学通报(英文版)
• 学科: 化学
• 年，卷（期）: 2012,（27）
• 页码范围: 3556-3559
• 页数: 4页
• 分类号: O613.71
• 语种: 中文

摘要

We developed a cluster ion beam system that produces negative cluster beams of C 1-C 10 with ion current of 4.5 nA-50 A at extraction voltages ranging from 6 to 20 kV.The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder.Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV/atom without deceleration.Small carbon clusters C 2 and C 4 were implanted into Ni/SiO 2 /Si substrates and following post-thermal treatment graphene was obtained.Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2-3 layers of graphene.The Raman data reveals clear effect of nonlinear cluster-surface interaction in ion beam synthesis of two-dimensional nanomaterials.