Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

• 作者: Bo Gan Huiming Zeng Tingcun Wei Wu Gao Yann Hu
• 来源期刊: 信号与信息处理(英文)
• 学科: 工学
• 关键词: CDZNTE DETECTOR LOW Noise FRONT-END READOUT CMOS
• 年，卷（期）: 2013,（2）
• 页码范围: 123-128
• 页数: 6页
• 分类号: TN7

摘要

In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.