Elimination of the Schottky Barrier at an Au-ZnSe Nanowire Nanocontact via in Situ Joule Heating
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摘要:
ZnSe nanowires (NWs) with a band gap of 2.7eV have potential applications in the emission of blue radiation such as a laser.[1] At present,one of the limiting factors of ZnSe laser's working time of continuous operation is heat dissipation occurring during performance.This heat is partly generated at the metalZnSe (M-S) contacts due to the Schottky barrier.[2]The M-S nanocontacts which link the active region of the nanoelectronics to the external circuit plays an important role in the performance of the nanoelectronics based on the semiconductor NWs since the current transport mechanism in such M-S-M nanostructures is mainly dominated by the properties of the M-S nanocontacts.[3] Commonly,the presence of the Schottky barrier resulting from a field ramp and a potential step due to the band bending within ZnSe near the metal contact can cause high contact resistance and a voltage drop occurs when current passes through the Schottky barrier.