Experimental Demonstration of <i>g<sub>m</sub></i>/I<i><sub>D</sub></i>Based Noise Analysis

• 作者: Jack Ou Jui-Chu Lee Pietro M. Ferreira
• 来源期刊: 电路与系统(英文)
• 学科: 医学
• 关键词: gm/ID Design METHODOLOGY Noise Analysis FLICKER Noise
• 年，卷（期）: 2014,（4）
• 页码范围: 69-75
• 页数: 7页
• 分类号: R73

摘要

Recent studies using BSIM3 models have suggested that noise depends on the transconductance-to-drain ratio gm/ID of a transistor. However, to the best of our knowledge, no experimental result demonstrating gm/ID dependent noise previously observed in simulation is available in the literature. This paper examines the underlying principles that make it possible to analyze noise using gm/ID based noise analysis. Qualitative discussion of normalized noise is presented along with experimental results from a 130 nm CMOS process. A close examination of the experimental results reveals that the device noise is width independent from 1 Hz to 10 kHz. Moreover, noise increases as gm/ID is reduced. The experiment observation that noise is width independent makes it possible for circuit designers to generate normalized parameters that are used to study noise intuitively and accurately.