Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature

• 作者: Durga Prasad Sapkota Koichi Wakita Madhu Sudan Kayastha Makoto Takahashi
• 来源期刊: 光学与光子学期刊(英文)
• 学科: 化学
• 关键词: OPTOELECTRONICS ELECTROABSORPTION MODULATOR
• 年，卷（期）: 2014,（5）
• 页码范围: 99-103
• 页数: 5页
• 分类号: O6

摘要

We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.