Drastic Resistivity Reduction of CVD-TiO<sub>2</sub>Layers by Post-Wet-Treatment in HCl Solution

• 作者: Kazuhiro Ishibashi Sakura Hatakeyama Satoshi Yamauchi
• 来源期刊: 结晶过程及技术期刊(英文)
• 学科: 医学
• 关键词: LPCVD Poly-Crystalline TIO2 POST Wet-Treatment Low Resistive TIO2
• 年，卷（期）: 2015,（1）
• 页码范围: 24-30
• 页数: 7页
• 分类号: R73

摘要

Poly-crystalline anatase TiO2 layer fabricated by LPCVD using titanium-tetra-iso-propoxide and NbF5 in H2-ambient was treated in conc.-HCl solution after thin layer of IIIb-group metal was deposited on the TiO2 layer. Resistivity of the as-deposited layer about 1 × 10-1 Ω·cm was drastically reduced to 3 × 10-3 Ω·cm by the wet-treatment using indium. Temperature dependence of the resistivity increased with temperature above 100 K for the wet-treated layer was quite different from that decreased above 100 K for the as-deposited layer, whereas the resistivity was saturated at lower temperatures. The resistivity at room-temperature was decreased with the thickness before the wet-treatment but independent on the thickness above 100 nm for the wet-treated layer. Indium was more effective for the resistivity reduction than gallium but aluminum was not useful for the treatment. As the results that the wet-treatment using indium was examined for the TiO2 layers deposited by various conditions, the optimum deposition condition to reduce the resistivity of the layer after the wet-treatment was clearly different from that for the as-deposited layer.