Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

• 作者: Mohamad Idham Nur Ain Shota Ishizaki Tatsuya Matsunaga Yoshifumi Murakami Yuichi Sato
• 来源期刊: 现代物理(英文)
• 学科: 医学
• 关键词: GaN INGAN Amorphous Carbon Graphite Quartz Glass Ge DOPING Mg DOPING
• 年，卷（期）: 2015,（9）
• 页码范围: 1289-1297
• 页数: 9页
• 分类号: R73

摘要

Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and InxGa1-xN thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films;and p-type conduction in the films was confirmed.