Field Electron-Emission from a-CN<sub>x</sub>:H Films Formed on Al Films Using Supermagnetron Plasma CVD

• 作者: Haruhisa Kinoshita Hiroki Takeuchi Ryouhei Taguchi Sho Suzuki
• 来源期刊: 现代物理(英文)
• 学科: 医学
• 关键词: Supermagnetron PLASMA Chemical Vapor Deposition Amorphous Carbon NITRIDE FIELD Emission
• 年，卷（期）: 2015,（11）
• 页码范围: 1602-1608
• 页数: 7页
• 分类号: R73

摘要

Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO2) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. The rf powers (13.56 MHz) of both the upper and lower electrodes were modulated by a 2.5-kHz pulse at a duty ratio of 12.5%. N2 gas concentration was controlled at 70%. The optical band gap of a-CNx:H films was about 0.75 eV. The a-CNx:H films deposited on substrates of p-Si, Al/n-Si and Al/glass showed low threshold emission electric fields (ETH) of 10, 13 and 12 V/μm, respectively. The a-CNx:H film deposited on low-cost Al film (Al/glass) showed a sufficiently low ETH of 12 V/μm, eliminating the need for high-cost p-Si substrates.