The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO<sub>2</sub>Structures

• 作者: Aram A. Sahakyan Hamlet S. Karayan Hrant N. Yeritsyan Vachagan V. Harutunyan Vahan A. Sahakyan
• 来源期刊: 现代物理(英文)
• 学科: 医学
• 关键词: METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES Radiation Effects Surface States (SS) Density Insulator-Semiconductor (I-S) Interface ANNEALING
• 年，卷（期）: 2015,（11）
• 页码范围: 1657-1662
• 页数: 6页
• 分类号: R73

摘要

The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.