3-22 Visible Light Emission from GaAs Surface Bombarded by Highly Charged Xe^q+Ion

• 作者: Chen Yanhong Cheng Rui Guo Yipan Lei Yu Wang Yuyu Xu Qiumei Yang Zhihu Zhao Hongyun Zhou Xianming
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报：英文版
• 学科: 物理学
• 年，卷（期）: 2016,（1）
• 页码范围: 100-100
• 页数: 1页
• 分类号: O4

摘要

GaAs is a direct band gap semiconductor,which makes it a very useful material for the manufacture of light emitting diodes and semiconductor lasers.Impact of highly charged ions(HCI)on semiconductor solid surfaces gives rise to visible light emission from excited sputtered atoms.This work measured visible light emission from the monocrystal GaAs(100)surface bombarded by highly charged Xe^q+(6≤q≤23)as a function of charged state of the incident ion.The experiment was carried out at the 320 kV platform for multi-discipline research with HCIs in the Institute of Modern Physics,Chinese Academy of Sciences.