4-21 Investigation of Heavy Ion Flux Effect on Multi-bit Upset in Bulk-Si SRAMs

• 作者: Liu Jie Liu Tianqi Luo Jie Sun Youmei Wang Bin Ye Bing
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报：英文版
• 学科: 物理学
• 年，卷（期）: 2016,（1）
• 页码范围: 135-135
• 页数: 1页
• 分类号: O4

摘要

Heavy ion flux is an important irradiation parameter in single event testing.Until now,not too much study was conducted concerning ion flux effect.In this work,flux effect on multi-bit upsets in bulk-Si SRAMs was investigated using Bi ions with the LET of 99.8 MeV.cm^2/mg over the flux range from 10 to 2.104 ions/(cm^2.s).The tested devices were 90 nm bulk-Si SRAMs with memory size of 1 Mb(DUT#1)and 512 kb(DUT#2).