5-6 Fabrication of New p-type Silicon Strip Detectors with Deep p+Diffusion Structure

• 作者: Cheng Cuihong Li Chunyan Li Zhankui Wang Xiuhua
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报：英文版
• 学科: 物理学
• 年，卷（期）: 2016,（1）
• 页码范围: 211-212
• 页数: 2页
• 分类号: O4

摘要

Junction engineering has been proposed[1]and demonstrated[2]to be a promising route to radiation-hardness segmented silicon sensors and a tool for better understanding the mechanism of charge multiplication in severely irradiated silicon detectors.We have been developing new p-type strip detectors with deep p+diffusion structure to enhance the charge multiplication effect in the p-type electrodes.The detectors were processed on 4-inch diameter,FZ,300-μm thick,<111>-oriented,n-type silicon wafers,with nominal resistivity of 6 kΩ·cm.