Numerical Simulation of Varied Buffer Layer of Solar Cells Based on Cigs

• 作者: Boko Aka Sampson Oladapo Oyedele
• 来源期刊: 材料科学建模与数值模拟(英文)
• 学科: 医学
• 关键词: NUMERICAL Simulation CIGS SOLAR Cell SCAPS-1D BUFFER Layer Efficiency
• 年，卷（期）: 2017,（3）
• 页码范围: 33-45
• 页数: 13页
• 分类号: R73

摘要

Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devices: open-circuit?voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),?areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion?efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This?result is validated by experimental results?(20%). At 300 K, when the thickness?of?the buffer layer (CdS, ZnS, ZnSe,?InSe2) increases from 100 nm to 500?nm,?with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,?with the other parameters maintained?constant, both open circuit voltage and conversion efficiency also decrease.?The?effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases?of 3% than a single buffer CdS.