ZnO Films Deposited on Porous Silicon by DC Sputtering

• 作者: Ayumu Matsumoto Masato Ohmukai Takuya Nakagawa
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 物理学
• 关键词: ZnO Film DC SPUTTERING ANNEALING X-Ray DIFFRACTION Analysis Porous Silicon
• 年，卷（期）: 2017,（6）
• 页码范围: 12-20
• 页数: 9页
• 分类号: O48

摘要

ZnO is now a fascinating semiconductor oxide material for light emission or transparent electronic conductors. We deposited ZnO films on porous silicon, which is known as a light emitting material based on silicon, by means of a direct current sputtering technique. The deposition was performed at room temperature, and the samples were annealed afterwards to improve the ZnO crystalline quality. The discussion to compare our results with that formed on Si wafer, reveals that the ZnO on porous silicon has the better crystalline quality in the scope of an X-ray diffraction measurement.