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摘要:
As an indirect band gap material, Germanium (Ge) has low efficiency of radiative recombination in the wavelength area of about 1550 nm. However, the difference between the direct and indirect band gap is very small (~140 meV) and photoluminescence emission ability of Ge could be greatly enhanced by heavy n-doping process. In this work, Ge growth directly on Si (001) substrate by molecular beam epitaxial (MBE) technique and a high n-doping level in Ge was obtained owning to using GaP decomposition source. The GaP solid source produces P2 molecules instead of P4 molecules, which have higher sticking coefficient than that of P4 comparing to the traditional doping method from PH3 gas precursor molecules. The dependence of optical property on Ge film thickness is also studied. The out-diffusion phenomenon of phosphorus dopant has been observed through SIMS profile analysis. An activated phosphorus concentration can be achieved up to more than 2 × 1019 atoms?cm&minus3 confirmed by Hall effect measurement. This result contributes to realization of Ge-on-Si devices for optoelectronic applications.
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篇名 A New Approach for Heavy <i>N</i>-Doping Process in Ge Epilayers Using Specific Solid Source
来源期刊 光学与光子学期刊(英文) 学科 医学
关键词 Germanium HEAVY N-DOPING GaP SOURCE Photoluminescence Optoelectronic Applications
年,卷(期) 2018,(2) 所属期刊栏目
研究方向 页码范围 11-19
页数 9页 分类号 R73
字数 语种
DOI
五维指标
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研究主题发展历程
节点文献
Germanium
HEAVY
N-DOPING
GaP
SOURCE
Photoluminescence
Optoelectronic
Applications
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研究分支
研究去脉
引文网络交叉学科
相关学者/机构
期刊影响力
光学与光子学期刊(英文)
月刊
2160-8881
武汉市江夏区汤逊湖北路38号光谷总部空间
出版文献量(篇)
433
总下载数(次)
0
总被引数(次)
0
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