Synthesis of MgSiN<sub>2</sub>Powders from the Mg-Si System

• 作者: Qingda Li Ran Guo Takahiro Nomura Xiongzhang Liu Xuemei Yi
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 化学
• 关键词: Nitride Materials Crystal Growth X-Ray Diffraction Mg-Si SYSTEM
• 年，卷（期）: 2018,（1）
• 页码范围: 68-79
• 页数: 12页
• 分类号: O6

摘要

Magnesium silicon nitride (MgSiN2) was synthesized without any additives under a nitrogen gas flow (200 mL/min) using a nitriding method. The effects of temperature and holding time on its purity and morphology were investigated. A single-phase MgSiN2 powder was obtained at 1350℃ for 1 h and 1250℃ for 11 h. However, the decomposition of MgSiN2 occurred at 1450℃, suggesting that the optimum temperature for the preparation of MgSiN2 from Mg-Si system was 1350℃. The phase purity, morphology, size of the product and elemental composition of the samples were detected by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy spectrometer (EDS), respectively. The evaporation of Mg and Si resulted in the formation of many voids in the blocky product. The temperature gradient promotes the growth of MgSiN2 on the surface of massive products along the tip. The concentration gradient of Mg and Si vapors in the void resulted in the columnar growth of MgSiN2.