Fabrication and Characterization of PZN-4.5PT Inorganic Perovskites Nanoparticles Thin Films Deposited on P-Type Silicon Substrate

• 作者: Diouma Kobor Jeanne Solard Laurence Motte Marcel Pasquinelli Moussa Touré Rémi Ndioukane
• 来源期刊: 现代物理(英文)
• 学科: 化学
• 关键词: NANOSTRUCTURES PEROVSKITE NANOPARTICLES Silicon Thin Layer Band Gap
• 年，卷（期）: 2018,（2）
• 页码范围: 259-272
• 页数: 14页
• 分类号: O6

摘要

This work involves an investigation of nanostructures, microelectronic properties and domain engineering of nanoparticles thin layers of Pb(Zn1/ 3Nb2/3)O3-PbTiO3 (PZN-PT) ferroelectric single crystals deposited on nanostructured silicon substrate. In this study, devices made from PZN-4.5PT nanoparticles thin films successfully deposited on silicon substrate have been studied and discussed. SEM images show the formation of local black circles and hexagonal shapes probably due to the nucleation of a new Si-gel component or phase induced by annealing. Micro Xray Fluorescence mapping shows that the high values of Si and B atoms (≅7 and 4 normalized unit respectively) can be explained by the fact that the substrate is p-type silicon. The most interesting result of optical measurements is the very good absorption for all the thin films in UV, Visible and NIR regions with values from 70% to 90% in UV, from 75% to 93% in Visible and NIR. Tauc plots present particularities (rarely encountered behavior) with different segments or absorption changes showing the presence of multiple band gaps coming from the heterogeneity of the thin films (nanowires, gel and nanoparticles). Their values are 1.9 and 2.8 eV for DKRN-Gel, 2.1 and 3.1 eV for DKRN-UD and 2.1 and 3.2 eV for DKRN-D) corresponding respectively to the band gap of nanowires and that of the gel while the last ones correspond to the undoped and doped nanoparticles (3.1 and 3.2 eV respectively).