Heavy-Ion Radiation Effects on MRAM

• 作者: Cai Chang He Ze Hou Mingdong Ji Qinggang Li Dongqing Liu Jie Liu Tianqi Mo Lihua Sun Youmei Ye Bing Zhai Pengfei Zhao Peixiong
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报:英文版
• 学科: 工学
• 关键词: MRAM EEPROM PROM
• 年，卷（期）: 2018,（1）
• 页码范围: 111-113
• 页数: 3页
• 分类号: TP3

摘要

Nonvolatile memories play a critical role for storing significant data,the programs of micro control system and scientific observation data[1].Unfortunately,conventional charge non-volatile memories,EEPROM or PROM are hardly to suitable the new missions nowadays,such as the requirements of more than 10 years on-orbit service and ultra-deep space exploration missions,etc.Representation of novel NVRAM technologies of magnetoresistive random access memories(MRAM)utilize magnetic bits of a magnetic tunnel junction(MTJ)[2]to store binary data have inherently endurance to the direct ionization induced by the charge particle.Therefore,it is an ideal candidate general-purpose memory to be used in space-borne microelectronics.