Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2018,（7）
• 页码范围: 77-80
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/35/7/077103

摘要

Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed,which is grown by a horizontal hot-wall chemical vapor deposition reactor.By microwave photoconductivity decay lifetime measurements and photoluminescence measurements,the results show that the average carrier lifetime of as-grown epilayer across the whole wafer is 2.59 μs,while it is no more than 1.34μs near a triangle defect (TD).The scanning transmission electron microscope results show that the triangle structure defects have originated from 3C-SiC polytype and various types of as-grown stacking faults.Compared with the as-grown stacking faults,the 3C-SiC polytype has a great impact on the lifetime.The reduction of TD is essential to increasing the carrier lifetime of the as-grown thick epilayer.