AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature

• 作者: Amary Thiam El Hadji Sow Grégoire Sissoko Ibrahima Diatta Mamadou Lamine Ba Mamadou Wade Marcel Sitor Diouf Moustapha Thiame Ndeye Thiam Oulymata Mballo Youssou Traore
• 来源期刊: 现代物理(英文)
• 学科: 工学
• 关键词: Vertical Multi-Junctions Solar Cell AC BACK SURFACE Recombination Velocity TEMPERATURE Bode and Nyquist Diagrams
• 年，卷（期）: 2019,（10）
• 页码范围: 1235-1246
• 页数: 12页
• 分类号: TM9

摘要

The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.