Influence of the Annealing Temperature on the Thickness and Roughness of La<SUB>2</SUB>Ti<SUB>2</SUB>O<SUB>7</SUB>Thin Films

• 作者: Abdelmoneim Mohamed Awadelgied Ahmed Mohamed Salih Ala Gasim Mohamed A. Baba Nafie Abdallatief Almuslet
• 来源期刊: 材料物理与化学进展(英文)
• 学科: 工学
• 关键词: La₂Ti₂O₇ Thin Films PLD Perovskites Annealing Temperature
• 年，卷（期）: clwlyhxjzyw_2020,（8）
• 页码范围: 189-198
• 页数: 10页
• 分类号: TG1

摘要

In this work, the impact of the substrate annealing temperature on the thickness and roughness of La₂Ti₂O₇ thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited <span style="white-space:normal;">La</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">Ti</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">7</sub> thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly;the maximum thickness was found (231 nm) when LTO thin film deposited at 500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.