Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

• 作者: Adama Ouedraogo Boukaré Ouedraogo Boureima Kaboré Dieudonné Joseph Bathiebo
• 来源期刊: 能源与动力工程(英文)
• 学科: 工学
• 关键词: POLYCRYSTALLINE Silicon Solar Cell Space Charge Region Photo-Current Photo-Voltage Conversion Efficiency pn-Junction CAPACITANCE EXTERNAL ELECTRICAL Field
• 年，卷（期）: 2020,（5）
• 页码范围: 143-153
• 页数: 11页
• 分类号: TN3

摘要

The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source. An external electrical source is integrated in a solar cell system. The electronic carriers charge generated in the solar cell crossed mainly the junction with the great strength external electrical field. In open circuit, this crossing of the electronic charge carriers causes the thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the photo-voltage for different external electrical fields. The electric field causes the decrease of the photo-voltage mainly the open-circuit photo-voltage. The decrease of the photo-voltage translates the narrowing of the Space Charge Region (SCR). The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source. The increase of the electrical field causes rather the narrowing of the SCR. That can provide an improvement of the solar cell’s electrical outputs.