Comprehensive Analysis of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>Based Solar Cells with Zn<sub>1-y</sub>Mg<sub>y</sub>O Buffer Layer

• 作者: Ariel Teyou Ngoupo Daouda Oubda François Zougmoré Marcel Bawindsom Kébré Soumaïla Ouédraogo
• 来源期刊: 材料科学与应用期刊(英文)
• 学科: 工学
• 关键词: Device Modeling Zn(Mg O) Cu(In Ga)Se₂ Interface Sates Conduction Band Offset
• 年，卷（期）: clkxyyyqkyw_2020,（12）
• 页码范围: 880-892
• 页数: 13页
• 分类号: TM9

摘要

The development of cadmium-free CIGS solar cells with high conversion efficiency is crucial due to the toxicity of cadmium. Zinc-based buffer layers seem to be the most promising. In this paper, a numerical analysis using SCAPS-1D software was used to explore the Zn(Mg,O) layer as an alternative to the toxic CdS layer. The effect of several properties such as thickness, doping, Mg concentration of the Zn(Mg,O) layer on the current-voltage parameters was explored and their optimal values were proposed. The simulation results reveal that the optimal value of the ZMO layer thickness is approximately 40 nm, the doping at 10¹⁷ cm^-3 and an Mg composition between 0.15 and 0.2. In addition, the effect of Gallium (Ga) content in the absorber as well as the Zn(Mg,O)/CIGS interface properties on the solar cell’s performance was examined. The results show that contrary to the CdS buffer layer, the best electrical characteristics of the ZMO/CIGS heterojunction are obtained using a Ga-content equal to 0.4 and high interface defect density or unfavorable band alignment may be the causes of poor performances of Zn(Mg,O)/CIGS solar cells in the case of low and high Mg-contents.