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摘要:
The figure of merit ZT is the direct embodiment of thermoelectric performance for a given material.However,as an indicator of performance improvement,the only ZT value is not good enough to identify its outstanding inherent properties,which are highly sought in thermoelectric community.Here,we utilize one powerful parameter to reveal the outstanding properties of a given material.The weighted mobility is used to estimate the carrier transports of p-type SnS crystals,including the differences in doping level,carrier scattering and electronic band structure.We analyze the difference in carrier scattering mechanism for different crystal forms with the same doping level,then evaluate and confirm the temperature-dependent evolution of electronic band structures in SnS.Finally,we calculate the quality factor B based on the weighted mobility,and establish the relationship between ZT and B to further predict the potential performance in p-type SnS crystals with low cost and earth abundance,which can be realized through taking advantage of the inherent material property,thus improving B factor to achieve optimal thermoelectric level.
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篇名 Predicting the Potential Performance in P-Type SnS Crystals via Utilizing the Weighted Mobility and Quality Factor
来源期刊 中国物理快报(英文版) 学科
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年,卷(期) 2020,(8) 所属期刊栏目 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL,MAGNETIC, AND OPTICAL PROPERTIES
研究方向 页码范围 88-93
页数 6页 分类号
字数 语种 英文
DOI 10.1088/0256-307X/37/8/087104
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序号 姓名 单位 发文数 被引次数 H指数 G指数
1 Wenke He 1 0 0.0 0.0
2 Bingchao Qin 1 0 0.0 0.0
3 Li-Dong Zhao 1 0 0.0 0.0
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中国物理快报(英文版)
月刊
0256-307X
11-1959/O4
16开
北京中关村中国科学院物理研究所内
1984
eng
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14318
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