Room-Temperature Processed Amorphous ZnRhCuO Thin Films with p-Type Transistor and Gas-Sensor Behaviors

• 作者: Bojing Lu Jianguo Lu Lingxiang Chen Rongkai Lu Rumin Liu Siqin Li Zhizhen Ye
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2020,（9）
• 所属期刊栏目: CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 108-111
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/37/9/098501

摘要

We examine an amorphous oxide semiconductor (AOS) of ZnRhCuO.The a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as well as a high visible transmittance above 87％ with a wide bandgap of 3.12 eV.Using a-ZnRhCuO films as active layers,thin-film transistors (TFTs) and gas sensors are fabricated.The TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel,with an on-to-off current ratio of ～1 × 103 and field-effect mobility of 0.079cm2V-1s-1.The behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type conductivity.Our achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.