A synaptic transistor with NdNiO3

• 作者: Can Wang Chen Ge Er-Jia Guo Ge Li Guo-Zhen Yang Kui-Juan Jin Meng He Xiang Wang
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（9）
• 所属期刊栏目: SPECIAL TOPIC—Physics in neuromorphic devices
• 页码范围: 32-37
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/aba60c

摘要

Recently,neuromorphic devices for artificial intelligence applications have attracted much attention.In this work,a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films,a typical correlated electron material,is presented.The voltage-controlled metal-insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating.The non-volatile conductance change reached 104 under a 2 V gate voltage.By manipulating the amount of inserted protons,the three-terminal NdNiO3 artificial synapse imitated important synaptic functions,such as synaptic plasticity and spike-timing-dependent plasticity.These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.

作者信息

序号	姓名	单位	发文数	被引次数	H指数	G指数
1	Xiang Wang	中国科学院物理研究所	2	0	0.0	0.0
2	Chen Ge	中国科学院物理研究所	1	0	0.0	0.0
3	Ge Li	中国科学院物理研究所	1	0	0.0	0.0
4	Er-Jia Guo	中国科学院物理研究所	1	0	0.0	0.0
5	Meng He	中国科学院物理研究所	1	0	0.0	0.0
6	Can Wang	中国科学院物理研究所	1	0	0.0	0.0
7	Guo-Zhen Yang	中国科学院物理研究所	1	0	0.0	0.0
8	Kui-Juan Jin	中国科学院物理研究所	1	0	0.0	0.0