Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

• 作者: Cheng-Zhan Li Hong Chen Ji-Long Hao Jiang Lu Sheng-Kai Wang Xiao-Li Tian Xin-Yu Liu Yi-Dan Tang Yun Bai
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（9）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 527-533
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab9434

摘要

Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude,specifically,from 3 × 1012 cm-2.eV-1 to 4× 1011 cm-2.eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field.Particularly,the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation,indicating that the carbonrelated defects are further reduced.