Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity,and harmonic distortion analysis?

• 作者: Hui-Fang Xu Wen Sun Xin-Feng Han
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（10）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 670-680
• 页数: 11页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab9c06

摘要

The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling tech-nology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demon-strate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time; it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.