A review of rare-earth oxide films as high k dielectrics in MOS devices—Commemorating the 100th anniversary of the birth of Academician Guangxian Xu

• 作者: Shuan Li Youyu Lin Siyao Tang Lili Feng Xingguo Li
• 来源期刊: 稀土学报（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: INVITED REVIEWS
• 页码范围: 121-128
• 页数: 8页
• 语种: 英文

摘要

Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metal-oxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportional to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).