Grain Boundary Effects on the Mobility of Chemical Vapor Deposition Synthesized Monolayer MoS2-FETs

• 来源期刊: 结构化学
• 年，卷（期）: 2021,（4）
• 所属期刊栏目: materials structural chemistry
• 页码范围: 512-518
• 页数: 7页
• 语种: 英文
• DOI: 10.14102/j.cnki.0254-5861.2011-2934

摘要

Molybdenum disulphide (MoS2) has emerged as a promising candidate for low-power digital applications.However,grain boundaries play a decisive role in determining the carrier mobility and performance of MoS2-FETs.In this work,we report a systematic study on the grain boundary of chemical vapor deposition (CVD) MoS2.We found that in the ON-state,if current flows across a grain boundary that is aligned perpendicular to the channel length,the current of CVD MoS2-FETs can be significantly reduced,while in the OFF-state,the effect is negligible.Metal-insulator-transition is clearly observed,indicating the high quality of our CVD samples,and it is also shown that grain boundaries increase the metal-insulator-transition crossover-voltage in MoS2-FETs.Thereby,this work provides useful information and guidance in understanding the nature of carrier transport in synthesized MoS2 devices,and the developed framework can be applied to other 2D semiconductors in general,as well as in optimizing the CVD process and device design with 2D materials.