A new quaternary selenide Ba4Sn3GeSe9 was synthesized by high temperature solid state reaction method and fully characterized by elemental analysis,UV-vis spectrum,and single-crystal X-ray diffraction.The title compound crystallizes in the orthorhombic space group Pnma with a = 12.463(3),b = 9.308(2)and c =17.892(5)?.Ba4Sn3GeSe9 can be characterized by a zero-dimensional compound composed by special[GeSnSe5]4-units,[Sn2Se4]4-units and the adjacent cations Ba2+ions.The[GeSnSe5]4-unit is composed of a SnSe3 trigonal pyramid formed by divalent Sn2+and edge-sharing with a GeSe4 tetrahedron,and the[Sn2Se4]4-unit is composed of two SnSe3 trigonal pyramids.Ba4Sn3GeSe9 is an indirect semiconductor with a band gap of 1.21 eV.