SBT-memristor-based crossbar memory circuit

• 作者: Mei Guo Ren-Yuan Liu Ming-Long Dou Gang Dou
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 769-778
• 页数: 10页
• 语种: 英文
• DOI: 10.1088/1674-1056/abd7dc

摘要

Implementing memory using nonvolatile,low power,and nano-structure memristors has elicited widespread interest.In this paper,the SPICE model of Sr0.95Ba0.05TiO3 (SBT)-memristor was established and the corresponding characteristic was analyzed.Based on an SBT-memristor,the process of writing,reading,and rewriting of the binary and multi-value memory circuit was analyzed.Moreover,we verified the SBT-memristor-based 4 × 4 crossbar binary and multi-value mem-ory circuits through comprehensive simulations,and analyzed the sneak-path current and memory density.Finally,we apply the 8 × 8 crossbar multi-value memory circuits to the images memory.