Post-deposition-annealed lanthanum-doped cerium oxide thin films:structural and electrical properties

• 作者: Viral Nivritti Barhate Khushabu Santosh Agrawal Vilas Sidhhanath Patil Ashok Mahadu Mahajan
• 来源期刊: 稀有金属（英文版）
• 年，卷（期）: 2021,（7）
• 所属期刊栏目: ORIGINAL ARTICLES
• 页码范围: 1835-1843
• 页数: 9页
• 语种: 英文

摘要

The metal-organic-decomposed lanthanum cer-ium oxide(LaCeO2)solution was spin-coated on p-type Si substrate to form thin films.The method of microwave-as-sisted annealing was adopted to modify the surface proper-ties of the deposited thin films.The post-deposition annealing(PDA)at different microwave powers and thermal annealing temperature of 400℃was performed on LaCeO2 thin films spin-coated on Si.Influence of this PDA on structural and electrical properties of deposited LaCeO2 thin films was studied and compared.X-ray diffraction(XRD)and Fourier transform infrared spectroscopy(FTIR)results reveal the great improvement in the structural properties in terms of removal of residual impurities from LaCeO2 films,reduced roughness and improvement in crystalline proper-ties as compared to those of hot-plate-annealed samples.The electrical properties of Al/LaCeO2/Si stack were also stud-ied.The different electrical parameters such as k value,interface trap density(Dit)and effective oxide charges(Qeff)were extracted and found to be improved with the increase in microwave annealing power.