Fatigue-less relaxor ferroelectric thin films with high energy storage density via defect engineer

• 作者: Baijie Song Shuanghao Wu Hao Yan Kun Zhu Liuxue Xu Bo Shen Jiwei Zhai
• 来源期刊: 材料科学技术（英文版）
• 年，卷（期）: 2021,（18）
• 页码范围: 178-186
• 页数: 9页
• 语种: 英文

摘要

Thin film capacitors with excellent energy storage performances,thermal stability and fatigue endurance are strongly desired in modern electrical and electronic industry.Herein,we design and prepare lead-free 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3-x％Mn(x=0,0.5,1.5,2,3)thin films via sol-gel method.Mn ions of divalent valence combine with oxygen vacancies,forming defect complex,which results in marked decline in leakage current and obvious enhancement in breakdown strength.A high energy storage density～47.6 J cm-3 and good efficiency～65.68％are simultaneously achieved in 2％Mn doped 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3 thin film capacitor.Moreover,the 2％Mn-doped thin film exhibits excellent thermal stability in wide operating temperature range(35-115℃)and strong fatigue endurance behaviors after 108 cycles.The above results demonstrate that 2％Mn-doped 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3 thin film capacitor with superior energy storage performances is a potential candidate for electrostatic energy storage.