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摘要:
Thermoelectric devices enable direct conversion between thermal and electrical energy.Recent studies have indicated that the thin film/substrate heterostructure is effective in achieving high thermoelectric performance via decoupling the Seebeck coefficient and electrical conductivity otherwise adversely inter-dependent in homogenous bulk materials.However,the mechanism underlying the thin film/sub-strate heterostructure thermoelectricity remains unclear.In addition,the power output of the thin film/-substrate heterostructure is limited to the nanowatt scale to date,falling short of the practical application requirement.Here,we fabricated the CrN/SrTiO3-x heterostructures with high thermoelectric output power and outstanding thermal stability.By varying the CrN film thickness and the reduction degree of SrTiO3-x substrate,the optimized power output and the power density have respectively reached 276 μW and 108 mW/cm2 for the 30 nm CrN film on a highly reduced surface of SrTiO3-x under a tem-perature difference of 300 K.The performance enhancement is attributed to the CrN/SrTiO3-x heteroin-terface,corroborated by the band bending as revealed by the scanning Kelvin probe microscopy.These results will stimulate further research efforts towards interface thermoelectrics.
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篇名 Interface-enhanced thermoelectric output power in CrN/SrTiO3-x heterostructure
来源期刊 能源化学 学科
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年,卷(期) 2022,(1) 所属期刊栏目
研究方向 页码范围 16-22
页数 7页 分类号
字数 语种 英文
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能源化学
双月刊
2095-4956
10-1287/O6
大连市中山路457号
eng
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2804
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