Emerging of two-dimensional materials in novel memristor

• 作者: Zhican Zhou Fengyou Yang Shu Wang Lei Wang Xiaofeng Wang Cong Wang Yong Xie Qian Liu
• 来源期刊: 物理学前沿
• 年，卷（期）: 2022,（2）
• 所属期刊栏目: Atomic, Molecular & Optical Physics
• 页码范围: 99-112
• 页数: 14页
• 语种: 英文

摘要

The rapid development of big-data analytics(BDA),internet of things(IoT)and artificial intelligent Technology(AI)demand outstanding electronic devices and systems with faster processing speed,lower power consumption,and smarter computer architecture.Memristor,as a promising Non-Volatile Memory(NVM)device,can effectively mimic biological synapse,and has been widely studied in recent years.The appearance and development of two-dimensional materials(2D material)accelerate and boost the progress of memristor systems owing to a bunch of the particularity of 2D material compared to conventional transition metal oxides(TMOs),therefore,2D material-based memristors are called as new-generation intelligent memristors.In this review,the memristive(resistive switching)phenomena and the development of new-generation memristors are demonstrated involving graphene(GR),transition-metal dichalcogenides(TMDs)and hexagonal boron nitride(h-BN)based memristors.Moreover,the related progress of memristive mechanisms is remarked.