Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

• 作者: Runrun Hao Kun Zhang Yinggang Li Qiang Cao Xueying Zhang Dapeng Zhu Weisheng Zhao
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2022,（1）
• 所属期刊栏目: RAPID COMMUNICATION
• 页码范围: 115-121
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/ac21bb

摘要

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque (SOT) effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet (Pt/Ni20Fe80 and W/Co20Fe60B20) and the topological insulator/ferromagnet (Bi2Se3lNi20Fe80).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.