Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

• 作者: Lin-Qing Wang Wei-Yan Wang Jin-Hua Huang Rui-Qin Tan Wei-Jie Song Jian-Min Chen
• 来源期刊: 稀有金属（英文版）
• 年，卷（期）: 2022,（3）
• 所属期刊栏目: ORIGINAL ARTICLES
• 页码范围: 1037-1042
• 页数: 6页
• 语种: 英文
• DOI: 10.1007/s12598-015-0510-9

摘要

Hydrogenated microcrystalline silicon(μc-Si∶H)thin films were deposited by an radio frequency(RF)(13.56 MHz)magnetron sputtering at different substrate temperatures(100-300℃),and the influences of substrate temperature on the growth and properties of μc-Si∶H thin films were investigated.Surface roughness and crystallinity of the thin films increase as substrate temperature in-creases.And all thin films are at the transition region(Xc=49.2％～61.0％).The μc-Si∶H thin films deposited at lower substrate temperature(≤200℃)represent a weak(220)preferred orientation,while the thin films deposited at higher substrate temperature(≥250℃)exhibit a weak(111)preferred orientation.The μc-Si∶H thin films have a dense structure,and the structural compactness of the thin films slightly increases with substrate temperature in-creasing.The Fourier transform infrared spectroscopy(FT-IR)results indicate that the μc-Si∶H thin films have a low hydrogen content(3.9 at％-5.6 at％),which is in favor of reducing light-induced degradation effect.