InAs SELF-ASSEMBLED NANOSTRUCTURES GROWN ON InP(001)

• 来源期刊: 中国物理(海外版)
• 年，卷（期）: 2000,（3）
• 页码范围: 222-224
• 页数: 3页
• 语种: 英文

摘要

The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) em bedded into InAlAs on InP(001) substrates have been prepared by solid molecular beam epitaxy. The structures are characterized by atomic force microecopy(AFM) and transmission electron microscopy(TEM). From AFM we have ob served for the first time that InAs qQWRs and QDs coexist, and we explained this phenomenon from the view of the energy related to the islands. Cross-sectional TEM shows that InAs qQWRs are vertically aligned every other layer along the growth direction [001], which disagrees with conventional vertical self-alignment of InAs QDs on GaAs substrate.