Preparation and Optical Properties of Nanocrystalline Ga0.62In0.38Sb Embedded in SiO2 Composite Films

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2000,（2）
• 页码范围: 142-144
• 页数: 3页
• 语种: 英文

摘要

Nanocrystalline Ga0.62In0.38Sb embedded in SiO2 matrix has been fabricated by radio frequency magnetron cosputtering. X-ray photoelectron spectroscopy strongly supports the existence of nanocrystalline Ga0.62In0.38Sb embedded in SiO2 matrix. The room-temperature Raman spectrum shows that the Raman peaks of the Ga0.62In0.38SbSiO2 composite film have a larger red shift of about 95.3 cm-1 (longitudinal-optic) and 120.1 cm-1 (transverseoptic) than those of the bulk GaSb. This can be explained by the phonon confinement and tensile stress effects. The room-temperature optical transmission spectra show that the absorption edge exhibits a large blue shift of about 2.43 eV compared with that of the bulk semiconductor, suggesting the existence of quantum size effects.