Novel deep—submicron x—ray lithography process for T—shaped gate patterns

• 作者: XieChangqing YiFuting
• 来源期刊: 北京同步辐射装置：英文版
• 学科: 工学
• 关键词: X射线平板印刷术 半导体二极管器件 T-型门图样
• 年，卷（期）: 2001,（1）
• 页码范围: 149-151
• 页数: 3页
• 分类号: TN31

摘要

The growing interest in the use of Gallium Arsenids semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker,A novel deep-submicron x-ray lithography process for T-shaped gate patterns useful for high-electron-mobility transistors(HEMT) is introduced in this work.In the fabrication of T-shaped gate a therr layer resists method is used.The x-ray exposure experiments were finished by Beijing Synchrotron Radiation Facility(BSRF) 3B1A beamline,and good result has been obtained.