Study of strain and compostion of the self—organized GE dots by grazing incident X—ray diffraction

• 作者: D.Xian Q.Jia W.Jiang W.Zheng X.Jiang X.Wang Z.Jiang
• 来源期刊: 北京同步辐射装置：英文版
• 学科: 工学
• 关键词: X射线衍射分析 自组织 锗薄膜生长 硅基底 半导体材料
• 年，卷（期）: 2001,（2）
• 页码范围: 194-197
• 页数: 0页
• 分类号: TN304.11

摘要

Grazing incident X-ray diffraction at different grazing angles for self-organized Ge dots grown on Si(001) are carried out and lattice constant expansions of 1.2?parallel to the surface as compared with the Si lattice are found within the Ge dots.A 3.1?lattice expansion of the Ge dots along the growth direction is also fund by ordinary X-ray(004) diffraction.According to the Poisson equation and the Vegard law,our results infer that the Ge dot should be a partially strain relaxed SiGe alloy with Ge content of abuot 55?2001 Elsevier Science B.V.All rights reserved.