Isostructural Transition of MgB2 Under High Pressure

• 来源期刊: 中国物理快报
• 学科: 物理学
• 年，卷（期）: 2001,（10）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,M
• 页码范围: 1401-1403
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

The high-pressure behaviour of the superconductor MgB2 with a hexagonal structure has been investigated by the in situ synchrotron radiation x-ray diffraction method under pressures up to 42.2 GPa in a diamond anvil cell. An abrupt decrease of about 7％ in the unit cell volume of this material occurs in the pressure range of 26.3-30.2 GPa. A split of the Raman spectrum was also observed. The jump of the compression curve and Raman spectrum are ascribed to an isostructural transition in MgB2 at a pressure of 30.2 GPa.