Photoluminescent Properties of ZnO Films Deposited on Si Substrates

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2001,（3）
• 所属期刊栏目: CENERAL
• 页码范围: 441-442
• 页数: 2页
• 分类号: 04
• 语种: 英文

摘要

The photoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering has been studied by using a synchrotron radiation (SR) light source. The excitation spectra show a strong excitation band around 195nm related to the 390nm emission band. Under SR vacuum ultraviolet excitation, a new emission band peaked at 290nm was found for the first time, besides the ultraviolet emission band (390nm) and green band (520nm).